Business EconomyPosted at: Jun 5 2025 10:20PM


RIR Power Electronics expands SiC diode production

New Delhi, June 5 (UNI) In a significant step towards bolstering India’s indigenous semiconductor capabilities, RIR Power Electronics Ltd. on Thursday announced the successful expansion of its 1200V Silicon Carbide (SiC) diode production through a strategic collaboration with Taiwan-based Pro Asia Semiconductor Corporation (PASC).
The partnership is expected to fast-track RIR’s go-to-market strategy by enabling the rollout of SiC devices in various voltage and current ratings, thereby de-risking operations and accelerating the ramp-up of high-efficiency power solutions from RIR’s upcoming fabrication facility in Odisha.
As part of the initiative, 1200V Schottky Barrier Diodes (SBDs) ranging from 2A to 60A—covering the most widely used configurations across multiple applications—have already been manufactured at PASC’s state-of-the-art fab in Taiwan and shipped to India. The company has secured purchase orders from Richardson Electronics (USA) and Ankit Plastics (India), both major players in the commercial, industrial, and defence supply chains.
"This milestone strengthens RIR’s position as a serious player in the global power semiconductor space," said Dr. Harshad Mehta, Chairman and Director of RIR Power Electronics Ltd. "It also lays the foundation for full-fledged production from our planned Odisha SiC fab, which will serve high-growth markets such as automotive, renewable energy, industrial, and defence."
The production expansion is backed by a comprehensive technology transfer agreement signed on October 17, 2024, with Sicamore Semi, USA.
Under the agreement, RIR holds exclusive manufacturing and commercialisation rights for SiC diodes, MOSFETs, and IGBTs based on Sicamore’s proven IP. The technology, originally developed for 4-inch wafers, has been successfully scaled up to 6-inch production with support from Vortex Semi (USA) and PASC.
RIR’s Odisha facility, with a proposed investment of Rs 618 crore, forms a crucial part of India’s ‘Make in India’ semiconductor drive. It is expected to reduce the country’s import dependency in strategic sectors, create employment, and position India as a competitive player in global advanced electronics manufacturing.
UNI BDN RN
Tags: #RIR Power Electronics expands SiC diode production
More News

OHPC signs agreement with WAPCOS for management consultancy services of 600 MW UIPSP

06 Jun 2025 | 7:12 PM

Bhubaneswar, June 6 (UNI) Odisha Hydro Power Corporation Ltd (OHPC) and WAPCOS Ltd on Friday signed an agreement for project management consultancy services for the 600 MW Upper Indravati Pumped Storage Project (UIPSP) at Mukhiguda.

see more..

Kamdhenu to scale up branded colour coated sheets capacity by 25 pc in Telangana plant

06 Jun 2025 | 6:18 PM

Hyderabad, June 6 (UNI) In a strategic move to strengthen its market share and presence of its brand 'Kamdhenu Colour Max Sheet’ in Telangana, Kamdhenu Limited, India’s largest manufacturer and seller of branded TMT Bars in retail, on Friday announced plans to scale up its Siddipet Plant manufacturing capacity by 25 percent within a year.

see more..
Rupee up by 16 paise against USD

Rupee up by 16 paise against USD

06 Jun 2025 | 5:52 PM

Mumbai, June 5 (UNI) Rupee on Friday appreciated by 16 paise to close at 85.63 on weak demand for US Dollar by bankers and importers, a forex trader said.

see more..

Kottayam-Kochi Rubber Market Rates

06 Jun 2025 | 5:51 PM

Kottayam, June 6 (UNI) Following were the Rubber Market rates announced by the Rubber Board here today per quintal.

see more..
RBI cuts repo rate by 50 bps to 5 50 pc

RBI cuts repo rate by 50 bps to 5 50 pc

06 Jun 2025 | 5:29 PM

Mumbai, June 6 (UNI) The Reserve Bank of India (RBI) on Friday in its second bi-monthly monetary policy of FY26. cut the repo rate by 50 basis points (bps) to 5.50 pc from 6.00 pc earlier. This is the central bank’s third consecutive repo rate cut.

see more..